VBT6045CBP-E3/8W【PDF 1/4 页】DIODE SCHOTTKY 30A 45V

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VBT6045CBP

www.vishay.com

Vishay General Semiconductor

Revision: 22-May12

Document Number: 89374

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Trench MOS Barrier Schottky Rectifier

for PV Solar Cell Bypass Protection

Ultra Low VF

= 0.33 V at I

= 10 A

FEATURES

? Trench MOS Schottky technology

? Low forward voltage drop, low power losses

? High efficiency operation

? Meets MSL level 1, per J-STD-020,

LF maximum peak of 245 °C

?TJ

200 °C max. in solar bypass mode application

? Material categorization: For

definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in solar cell junction box as a bypass diode for

protection, using DC forward current without reverse bias.

MECHANICAL DATA

Case: TO-263AB

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals:

Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity:

As marked

Mounting Torque:

10 in-lbs maximum

Notes

(1)

With heatsink

(2)

Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test

PRIMARY CHARACTERISTICS

IF(AV)

2 x 30 A

VRRM

45 V

IFSM

320 A

VF at IF

= 30 A 0.47 V

TOP

max. (AC mode) 150 °C

max. (DC forw

ard current) 200 °C

TO-263AB

PIN 1

PIN 2

HEATSINK

VBT6045CBP

TMBS?

MAXIMUM RATINGS (TA

= 25 °C unless otherwise noted)

PARAMETER SYMBOL VBT6045CBP UNIT

Maximum repetitive peak reverse voltage VRRM

45 V

Maximum average forward rectified current (fig. 1)

per device

IF(AV)

(1)

per diode 30

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

IFSM

320 A

Operating junction and storage temperature range (AC mode) TOP, TSTG

- 40 to + 150 °C

Junction temperature in DC forward current

without reverse bias, t ?

1 h

(2)

200 °C

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